20 stern ave. springfield, new jersey 07081 u.sa telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2n6845 IRFF9120 mechanical data dimensions in mm (inches) j.0(5 (0,16) 467(0.18) 12 70 10.500); 864(034) 9 40 (0 37) 801 (0315) 9,01 (0 355) 0 41 (0 016) 053(0.021)' dra p-channel enhancement mode high voltage power mosfets v dss i 5 08 (0.200) d(cont) rds(on) -100v -4.0a 0.60q 0 74 (0 029;. 1 14 (0.045)' to-39 pin1-source pin 2-gate ! 2.54 i (0.1 ooj features ? hermetically sealed to-39 metal package ? simple drive requirements ? lightweight ? screening options available pin 3-drain absolute maximum ratings (tcase = 25c unless otherwise stated) vgs id id 'dm pd tj , tstg tl rejc gate - source voltage continuous drain current (vgs = 0 , tcase = 25c) continuous drain current (vgs = 0 , tcase = 1 00c) pulsed drain current 1 power dissipation @ tcase = 25c linear derating factor operating and storage temperature range package mounting surface temperature (for 5 sec) thermal resistance junction to case 20v -4.0a -2.6a -16a 20 w 0.16 w/c -55 to 150c 300c 6.25c/w notes 1) repetitive rating - pulse width limited by maximum junction temperature. nj scmi-coiiductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information- furnished by nj semi-conductors is believed to he both accurate and reliable at the time of"going to press. hovvever n.i semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheet-., are current before placing orders.
2n6845 IRFF9120 electrical characteristics (tamb = 25c unless otherwise stated) parameter test conditions min. typ. max. unit static electrical ratings bvpss drain - source breakdown voltage abvdss temperature coefficient of atj breakdown voltage static drain - source on-state rds-15v id = -2.6a vr)s = -80v vro = 0 ljo wao tj = 125c vgs = 20v vgs = -20v -100 ; -0.10 '. 0.60 0.69 -2 -4 1.25 ; ' -25 ; -250 100 : : -100 v v/&c li v s ua na dynamic characteristics ciss input capacitance coss output capacitance crss reverse transfer capacitance qn total gate charge g qn, gate - source charge y qgd gate - drain ("miller") charge ld(on) turn-on delay time t,. rise time tdfoff) turn-off delay time tf fall time vgs = 0 vds = - 25v f=1mhz vgs = -10v id = -4.0a vno = -50v uo vdd = -5v id=-4.0a rg = 7.5s1 380 170 i 45 4.3 ' : 16.3 1.3 .' 4.7 1.0 : ' 9.0 60 100 50 : 70 pf nc ns source - drain diode characteristics ls continuous source current ism pulse source current vsd diode forward voltage1 trr reverse recovery time1 qrr reverse recovery charge1 ton forward turn-on time mosfet symbol showing the "__|p ntegral reverse p-n junction diode ^; s = - 4.0a tj = 25c f = -4.0a tj = 25c d| / d, < -1 ooa/us vdd ^ -5v -4.0 - 16 -4.8 200 3.1 negligible a v ns ,uc notes 1) pulse test: pulse width < 300ms, 5 < 2%
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